Modelling, design and test of a monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

A magnetic field-to-voltage converter using a magnetic MOSFET (MAGFET) device has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8 T, the obtained sensitivity was 0.03 T super(-1) with an offset lower than 0.2%. SPICE macro model for...

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Bibliographic Details
Published in:Analog integrated circuits and signal processing 2001-10, Vol.29 (1-2), p.115-126
Main Authors: Rubio, C, Bota, S, Macias, J G, Samitier, J
Format: Article
Language:English
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Summary:A magnetic field-to-voltage converter using a magnetic MOSFET (MAGFET) device has been designed, simulated and tested. The resulting sensor was measured under magnetic fields ranging from 0 to 0.8 T, the obtained sensitivity was 0.03 T super(-1) with an offset lower than 0.2%. SPICE macro model for the MAGFET in the saturation region is presented. Using an analogue Hardware Description Language (HDL-A) we have simulated the behaviour of the MAGFET and an interface circuit based on a custom current-mode sigma delta modulator.
ISSN:0925-1030
DOI:10.1023/A:1011242632761