Fundamental studies on large area Cu(In,Ga)Se2 films for high efficiency solar cells

This work reports the growth and characterization of thin films of Cu(In,Ga)Se2 (CIGS), which were grown by sequential sputtering, electrodeposition, and physical vapor deposition. Photovoltaic cells have been fabricated using these films with CdS heterojunction partners and the performance has been...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2001-01, Vol.70 (3), p.345-361
Main Authors: Hermann, A.M, Gonzalez, C, Ramakrishnan, P.A, Balzar, D, Popa, N, Rice, P, Marshall, C.H, Hilfiker, J.N, Tiwald, T, Sebastian, P.J, Calixto, M.E, Bhattacharya, R.N
Format: Article
Language:English
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Summary:This work reports the growth and characterization of thin films of Cu(In,Ga)Se2 (CIGS), which were grown by sequential sputtering, electrodeposition, and physical vapor deposition. Photovoltaic cells have been fabricated using these films with CdS heterojunction partners and the performance has been characterized. The effect of annealing conditions (temperature and duration) on the CIGS film microstructure and corresponding device performance has been investigated. Structure-property correlations were made using diffraction studies and Rietveld analysis. SEM studies were carried out to understand the effect of microstructure of the CIGS films on the solar cell efficiency. Cell efficiencies > 10% have been achieved by using optimized annealing conditions. Optical properties of the sputtered CIGS films were characterized using variable angle spectroscopic ellipsometry, and sputtered CIGS films have an optimum band gap. 12 refs.
ISSN:0927-0248
DOI:10.1016/S0927-0248(01)00076-9