Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices

Two-dimensional materials (2DMs) with extraordinary electronic and optical properties have attracted great interest in optoelectronic applications. Due to their atomically thin feature, 2DM-based devices are generally sensitive to oxygen and moisture in ambient air, and thus, practical application o...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2022-06, Vol.14 (22), p.25984-25992
Main Authors: Lu, Zhanjie, Zhu, Meijie, Liu, Yifan, Zhang, Gehui, Tan, Zuoquan, Li, Xiaotian, Xu, Shuaishuai, Wang, Le, Dou, Ruifen, Wang, Bin, Yao, Yuan, Zhang, Zhiyong, Dong, Jichen, Cheng, Zhihai, Chen, Shanshan
Format: Article
Language:English
Subjects:
Applications of Polymer, Composite, and Coating Materials
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Summary:Two-dimensional materials (2DMs) with extraordinary electronic and optical properties have attracted great interest in optoelectronic applications. Due to their atomically thin feature, 2DM-based devices are generally sensitive to oxygen and moisture in ambient air, and thus, practical application of durable 2DM-based devices remains challenging. Here, we report a novel strategy to directly synthesize amorphous BN film on various 2DMs and field-effect transistor (FET) devices at low temperatures by conventional chemical vapor deposition. The wafer-scale BN film with controllable thickness serves as a passivation and heat dissipation layer, further improving the long-term stability, the resistance to laser irradiation, and the antioxidation performance of the underneath 2DMs. In particular, the BN capping layer could be deposited directly on a WSe2 FET at low temperature to achieve a clean and conformal interface. The high performance of the BN-capped WSe2 device is realized with suppressed current fluctuations and 10-fold enhanced carrier mobility. The transfer-free amorphous BN synthesis technique is simple and applicable to various 2DMs grown on arbitrary substrates, which shows great potential for applications in future two-dimensional electronics.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.2c02803