Self-organization phenomena during porous silicon formation

In the system of electrolyte (hydrofluoric acid - HF-48 %)-silicon (phosphorus doped, specific resistivity is equal to 4.5 Ohms·cm) the self-organization phenomena were discovered and investigated which are developed during the pores formation and show themselves in formation of periodic concentric...

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Bibliographic Details
Published in:Solid state communications 1994, Vol.90 (4), p.217-221
Main Authors: Prokaznikov, A.V., Maslyenitsyn, S.F., Svyatchenko, A.A., Pavlov, S.T.
Format: Article
Language:eng ; rus
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Summary:In the system of electrolyte (hydrofluoric acid - HF-48 %)-silicon (phosphorus doped, specific resistivity is equal to 4.5 Ohms·cm) the self-organization phenomena were discovered and investigated which are developed during the pores formation and show themselves in formation of periodic concentric structures of closepacked array of pores of two kinds: circular and radial. Experimentally obtained current-potential characteristic is S-formed. The surface of porous silicon, which was formed by different conditions, is investigated.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(94)90463-4