GaAs diodes for TiT2-based betavoltaic cells

The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by...

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Bibliographic Details
Published in:Applied radiation and isotopes 2022-01, Vol.179, p.110030-110030, Article 110030
Main Authors: Dorokhin, M.V., Vikhrova, O.V., Demina, P.B., Kalentyeva, I.L., Vergeles, P.S., Yakimov, E.B., Lesnikov, V.P., Zvonkov, B.N., Ved, M.V., Danilov, Yu.A., Zdoroveyshchev, A.V.
Format: Article
Language:English
Subjects:
Betavoltaic
GaAs
Monte-Carlo modeling
Pulsed laser deposition
Semiconductors
Tritium
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Summary:The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance. •The GaAs diode part of TiT2-based betavoltaic cell was developed.•Thin carbon layer on the top of GaAs allowed improving the performance.•Characteristics of power supplies were estimated using the Monte-Carlo simulation.
ISSN:0969-8043
1872-9800
DOI:10.1016/j.apradiso.2021.110030