In-situ growth of high-Tc YBa2Cu3O7-x films at high deposition rate by low-pressure MOCVD

A new technique for metalorganic chemical vapour deposition using a very low deposition pressure (less than or equal to 1 Torr) has been developed for rapid deposition of superconducting YBa2Cu3O7-x films. A low deposition pressure not only raises the vaporisation rate of organic sources but also st...

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Bibliographic Details
Published in:Materials letters 1992, Vol.14 (5-6), p.255-258
Main Authors: TAO, W, QIAN, C. T, YE, C. Q
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:A new technique for metalorganic chemical vapour deposition using a very low deposition pressure (less than or equal to 1 Torr) has been developed for rapid deposition of superconducting YBa2Cu3O7-x films. A low deposition pressure not only raises the vaporisation rate of organic sources but also stabilises their sublimation characteristics, especially to Ba 2,2,6,6-tetramethyl-3,5-heptanedionate. At a substrate temperature of 800 C, a high growth rate of 20 micron/h can be obtained on (100) SrTiO3 substrates. The transport Jc (0 T, 77 K) values of these 1-2 micron thick films reached 800000 A/cm2 with Tc,0 greater than 90 K. 14 refs.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(92)90031-E