Nontrivial Giant Linear Magnetoresistance in Nodal-Line Semimetal ZrGeSe 2D Layers

Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge...

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Published in:Nano letters 2021-12, Vol.21 (23), p.10139-10145
Main Authors: Yang, Jie, Song, Zhi-Yong, Guo, Lei, Gao, Heng, Dong, Zhuo, Yu, Qiang, Zheng, Ren-Kui, Kang, Ting-Ting, Zhang, Kai
Format: Article
Language:English
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Summary:Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 104% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the “even-metal” regime and suppressed upon evolution to the normal “odd-metal” regime. The “even-to-odd” transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov’s quantum LMR theory indicates that the observed LMR cannot be trivial.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.1c01647