Correlation between mobility degradation and threshold-voltage behavior of subhalf-micron MOSFETs

Minority carrier mobility has been extracted from measurements on NMOS transistors with effective channel lengths down to 0.35 μm within the temperature range 208–403 K. The results indicate a significant mobility reduction for short channel devices at temperatures below 300 K. Furthermore, a slight...

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Bibliographic Details
Published in:ESSDERC '92: 22nd European Solid State Device Research conference 1992, Vol.19 (1), p.785-788
Main Authors: Wildau, H.-J., Bernt, H., Friedrich, D., Seifert, W., Staudt-Fischbach, P., Wagemann, H.G., Windbracke, W.
Format: Article
Language:English
Subjects:
Degradation
Electric variables measurement
Engineering
Engineering, Electrical & Electronic
Geometry
Length measurement
MOSFETs
Nanoscience & Nanotechnology
Optics
Physical Sciences
Physics
Physics, Applied
Scanning electron microscopy
Science & Technology
Science & Technology - Other Topics
Semiconductor process modeling
Technology
Temperature distribution
Threshold voltage
Very large scale integration
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Summary:Minority carrier mobility has been extracted from measurements on NMOS transistors with effective channel lengths down to 0.35 μm within the temperature range 208–403 K. The results indicate a significant mobility reduction for short channel devices at temperatures below 300 K. Furthermore, a slight increase of the threshold voltage was observed in the short channel region. Both effects can be explained by an inhomogeneous lateral doping profile within the channel, which was confirmed with 2-dimensional device simulation.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90545-3