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Boron accumulation at epi-substrate silicon interface during epitaxial growth
Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulatio...
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Published in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-01, Vol.15 (1), p.32-36 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 μm), with boron being electrically unactive. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/0921-5107(92)90025-5 |