fabrication of diamond membranes for MEMS using reactive ion etching of silicon

Polycrystalline diamond thin film has been grown on a silicon substrate using high pressure microwave plasma-assisted chemical vapor deposition from a gas mixture of methane and hydrogen at a substrate temperature of 950°C. A simple process flow has been developed to fabricate optically transparent...

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Bibliographic Details
Published in:Thin solid films 1998-09, Vol.330 (2), p.62-66
Main Authors: Ramesham, R., Ellis, C.D., Olivas, J.D., Bolin, S.
Format: Article
Language:English
Subjects:
Applied sciences
Diamond
Electronics
Etching of silicon
Exact sciences and technology
Membrane
Microelectronic fabrication (materials and surfaces technology)
Reactive ion etching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Polycrystalline diamond thin film has been grown on a silicon substrate using high pressure microwave plasma-assisted chemical vapor deposition from a gas mixture of methane and hydrogen at a substrate temperature of 950°C. A simple process flow has been developed to fabricate optically transparent polycrystalline synthetic diamond membranes/windows employing reactive ion etching (RIE) of a single crystal silicon substrate using an electron beam evaporated aluminum thin film mask pattern formed by photolithography. Scanning electron microscopy has been used to study the morphology of as-grown diamond thin films.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(98)00825-6