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Sputtering and radiation-enhanced segregation in amorphous CuTi alloys
Binary amorphous copper-titanium alloys of compositions 44, 53, 65 and 69 at% copper were sputtered with 2 keV Ar + ions. The surface concentrations were then determined by Auger electron spectroscopy and ion scattering spectrometry. It was found that Cu is sputtered preferentially as it segregates...
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Published in: | Surface science 1991-08, Vol.254 (1), p.73-80 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Binary amorphous copper-titanium alloys of compositions 44, 53, 65 and 69 at% copper were sputtered with 2 keV Ar
+ ions. The surface concentrations were then determined by Auger electron spectroscopy and ion scattering spectrometry. It was found that Cu is sputtered preferentially as it segregates to the surface. A recently developed model for radiation-enhanced surface segregation was used to fit the experimental data. The segregation energy decreases with increasing Cu concentration from 2500 Jmol
−1 to zero for the highest concentration, in qualitative agreement with several predictions on the segregating species in the alloy. The radiation-enhanced diffusion coefficients have values in the range (2–3) × 10
−20
m
2
s
. From the concentration profiles the depth of the altered layer was estimated to about 4 nm which coincides well with the range of the defect distribution caused by the argon ions according to TRIM calculations. A
Cu
Ti
sputtering ratio of 6 was needed for the best possible fit of the results. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/0039-6028(91)90639-A |