A large-signal physical MESFET model for computer-aided design and its applications

A large-signal physical MESFET model for computer-aided design and its applications

A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approac...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1989-12, Vol.37 (12), p.2039-2045
Main Authors: Pantoja, R.R., Howes, M.J., Richardson, J.R., Snowden, C.M.
Format: Article
Language:eng
Subjects:
Circuit simulation
Computational modeling
Computer simulation
Design automation
Distortion measurement
Frequency
Harmonic analysis
Intermodulation distortion
MESFET circuits
Nonlinear equations
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Summary:A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approach the semiconductor equations are reduced to a consistent one-dimensional approximation requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept is also developed and combined with the MESFET model. Numerical load-pull contours as well as intermodulation distortion contours have been simulated; their comparison with measured results validates the approach taken.< >
ISSN:0018-9480
1557-9670