Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnOx layers. All depositions were carried out at 300 ºC. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as crystallinity and the dependence of growth rate...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2021-08, Vol.32 (33), p.335703
Main Authors: Kalam, Kristjan, Rammula, Raul, Ritslaid, Peeter, Käämbre, Tanel, Link, Joosep, Stern, Raivo, Vinuesa, Guillermo, Dueñas, Salvador, Castán, Helena, Tamm, Aile, Kukli, Kaupo
Format: Article
Language:English
Subjects:
atomic layer deposition
magnetic materials
resistive switching
thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Atomic layer deposition method was used to grow thin films consisting of ZrO2 and MnOx layers. All depositions were carried out at 300 ºC. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as crystallinity and the dependence of growth rate on the deposition temperature. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO2, while the manganese oxide was shown to consist of cubic Mn2O3 and tetragonal Mn3O4 phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/abfee9