A choice of the optimum density of ion bombardment by ion-assisted physical vapour deposition of films

The densification process caused by the low temperature ion-assisted physical vapour deposition of films is considered as a consequence of collisional effects. A model allowing the quantitative estimation of the optimum ion current density required to produce a film with a maximum density is propose...

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Bibliographic Details
Published in:Thin solid films 1988-07, Vol.161 (1-2), p.249-256
Main Authors: Grigorov, G.I., Martev, I.N., Langeron, J.-P., Vignes, J.-L.
Format: Article
Language:English
Subjects:
Analysing. Testing. Standards
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Measurement of properties and materials state
Metals, semimetals and alloys
Metals. Metallurgy
Nondestructive testing
Physics
Specific materials
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The densification process caused by the low temperature ion-assisted physical vapour deposition of films is considered as a consequence of collisional effects. A model allowing the quantitative estimation of the optimum ion current density required to produce a film with a maximum density is proposed. Average energies per deposited atom for some elemental and compound film materials are given.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90256-8