Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition

The nature of dislocations in (001) CdTe-(001) GaAs heterostructures was investigated by transmission electron microscopy. The samples were grown by metalorganic chemical vapor deposition with CdTe layer thicknesses h ranging from 0.1 to 2.2 μm. The interface contains an array of misfit dislocations...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1987-05, Vol.50 (20), p.1423-1425
Main Authors: PETRUZZELLO, J, OLEGO, D, GHANDHI, S. K, TASKAR, N. R, BHAT, I
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The nature of dislocations in (001) CdTe-(001) GaAs heterostructures was investigated by transmission electron microscopy. The samples were grown by metalorganic chemical vapor deposition with CdTe layer thicknesses h ranging from 0.1 to 2.2 μm. The interface contains an array of misfit dislocations spaced about 31 Å apart, independent of h. These dislocations do not relax all of the lattice mismatch (14.6%) in the CdTe layers with h
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97842