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Maximum power spectroscopy of n-type a-Si:H, c-Si, CdSe, and InP in nonaqueous photoelectrochemical cells

Amorphous silicon photoanodes in a nonaqueous photoelectrochemical cell show wavelength dependence of their power outputs. This behavior has been studied by maximum power spectroscopy (MPS) and compared to similar experiments with conventional short-circuit spectroscopy. The derivative maximum power...

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1985-02, Vol.132 (2), p.349-353
Main Authors: ROSAMILIA, J. M, MILLER, B
Format: Article
Language:English
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Summary:Amorphous silicon photoanodes in a nonaqueous photoelectrochemical cell show wavelength dependence of their power outputs. This behavior has been studied by maximum power spectroscopy (MPS) and compared to similar experiments with conventional short-circuit spectroscopy. The derivative maximum power output under constant chopped input power (MPS) shows dependence on the wavelength distribution in superimposed fixed beams, whereas the conventional short-circuit measurements do not. Single-crystal substrates of n-Si, n-CdSe, and n-InP do not show any differences between the spectroscopies. Rotating ring-disk electrode studies confirm the regenerative behavior of the n-CdSe and n-InP electrodes with the Fe(HOCH2Cp)2 - Fe(HOCH2Cp)2(+) couple in LiClO4/methanol solution. Fe(HOCH2Cp)2=hydroxymethyl ferrocene.
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2113836