18.5-dB Gain at 18 GHz with a GaAs permeable base transistor

Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This extrapolates to an f_{\max} of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that th...

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Bibliographic Details
Published in:IEEE electron device letters 1985-09, Vol.6 (9), p.456-458
Main Authors: Bozler, C.O., Hollis, M.A., Nichols, K.B., Rabe, S., Vera, A., Chen, C.L.
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition
Doping profiles
Electronics
Epitaxial growth
Etching
Exact sciences and technology
Gain
Gallium arsenide
Gratings
Impurities
Mass spectroscopy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Tungsten
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Summary:Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This extrapolates to an f_{\max} of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired impurities in the grating region of these recent devices. It is quite probable that better performance can be achieved in future devices if those impurities can be eliminated.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26191