Turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold

We report on the formation of novel turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold. Experimentally, the laser emits a series of power dropouts within a roundtrip, and the number of dropouts per series depends on a set of parameters including the bias cur...

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Bibliographic Details
Published in:Optics letters 2020-09, Vol.45 (17), p.4903-4906
Main Authors: Gowda, Uday, Roche, Amy, Pimenov, Alexander, Vladimirov, Andrei G., Slepneva, Svetlana, Viktorov, Evgeny A., Huyet, Guillaume
Format: Article
Language:English
Subjects:
Computer simulation
Dropouts
Electric fields
Landau-Ginzburg equations
Lasers
Lasing
Parameters
Semiconductor lasers
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Summary:We report on the formation of novel turbulent coherent structures in a long cavity semiconductor laser near the lasing threshold. Experimentally, the laser emits a series of power dropouts within a roundtrip, and the number of dropouts per series depends on a set of parameters including the bias current. At fixed parameters, the drops remain dynamically stable, repeating over many roundtrips. By reconstructing the laser electric field in the case where the laser emits one dropout per roundtrip and simulating its dynamics using a time-delayed model, we discuss the reasons for long-term sustainability of these solutions. We suggest that the observed dropouts are closely related to the coherent structures of the cubic complex Ginzburg–Landau equation.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.397840