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Transport and persistent photoconductivity in InGaAs/InP single quantum wells
Hall effect and Shubnikov–de Haas data are presented for single 100 Å InGaAs/InP quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Both modulation doped and nominally undoped structures are studied. Measurements are made on the latter structures by using the low-tem...
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Published in: | Applied physics letters 1986-11, Vol.49 (20), p.1360-1362 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Hall effect and Shubnikov–de Haas data are presented for single 100 Å InGaAs/InP quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Both modulation doped and nominally undoped structures are studied. Measurements are made on the latter structures by using the low-temperature persistent photoconductivity to put carriers into the quantum well. Mobilities as high as 95 000 cm2/V s have been achieved at carrier densities of 9×1011 cm−2. The persistent photoconductivity effect is also used to study the dependence of mobility on carrier density and the data are analyzed in terms of ionized impurity and alloy disorder scattering. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.97324 |