GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s

The development of optical transmission calls for sensitive and fast optoelectic transducers. With the advent of optical local area networks, hybrid transducers may no longer be appropriate, and monolithic emitters and receivers will be preferred. In this paper, we report on the first monolithic pho...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1986-12, Vol.34 (12), p.1344-1348
Main Authors: Wang, H., Bacot, C., Gerard, C., Lievin, J.L., Dubon-Chevallier, C., Ankri, D., Scavennec, A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunctions
Miscellaneous
Optical and optoelectronic circuits
Optical fiber LAN
Optical fiber networks
Optical receivers
Optical sensors
Phototransistors
Resistors
Stimulated emission
Transducers
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Summary:The development of optical transmission calls for sensitive and fast optoelectic transducers. With the advent of optical local area networks, hybrid transducers may no longer be appropriate, and monolithic emitters and receivers will be preferred. In this paper, we report on the first monolithic photoreceiver implemented with GaAs-GaAIAs bipolar devices. One phototransistor and two transistors are integrated, together with four resistors on a 0.5x0.5-mm/sup 2/ GaAs chip. The transimpedance receiver has a bandwidth of 80 MHz. SignaI and noise power measurements indicate that for a digital signal at 140 Mbit/s, the minimum detectable power is 1 µW (-30 dBm).
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1986.1133547