Substrate instability during the LPE growth of (Ga, In) As alloys on InAs substrates

The LPE growth of Ga 1− x In x As ( x = 0.7–0.9) on (111)InAs substrates in the temperature range 500–650°C is described. In discussing the crystalline quality of the epitaxial layers, particular mention is made of a degradation of the substrate, apparently due to a rapid in-diffusion of gallium. Th...

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Bibliographic Details
Published in:Journal of crystal growth 1981-01, Vol.54 (3), p.485-492
Main Authors: Astles, M.G., Dosser, O.D., MacLean, A.J., Wright, P.J.
Format: Article
Language:English
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Summary:The LPE growth of Ga 1− x In x As ( x = 0.7–0.9) on (111)InAs substrates in the temperature range 500–650°C is described. In discussing the crystalline quality of the epitaxial layers, particular mention is made of a degradation of the substrate, apparently due to a rapid in-diffusion of gallium. This is analogous to an effect seen by previous workers during LPE growth of Ga 1− x In x Sb on InSb substrates. A mechanism is proposed to try to qualitatively explain the observed behaviour.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(81)90503-0