Single-Carrier Transport in Graphene/hBN Superlattices

Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on...

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Bibliographic Details
Published in:Nano letters 2020-04, Vol.20 (4), p.2551-2557
Main Authors: Iwasaki, Takuya, Nakaharai, Shu, Wakayama, Yutaka, Watanabe, Kenji, Taniguchi, Takashi, Morita, Yoshifumi, Moriyama, Satoshi
Format: Article
Language:English
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Summary:Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices would lead to an understanding of the transition of single-particle/correlated phenomena. Here, we show the single-carrier transport in a high-quality bilayer graphene/hBN superlattice-based quantum dot device. We demonstrate remarkable device controllability in the energy range near the charge neutrality point (CNP) and the hole-side satellite point. Under a perpendicular magnetic field, Coulomb oscillations disappear near the CNP, which could be a signature of the crossover between Coulomb blockade and quantum Hall regimes. Our results pave the way for exploring the relationship of single-electron transport and fractal quantum Hall effects with correlated phenomena in two-dimensional quantum materials.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.9b05332