Electrically-alterable memory using a dual electron injector structure

A novel type of electrically-alterable memory which uses the phenomenon of enhanced electron injection into SiO 2 from Si-rich SiO 2 to charge or discharge a floating polycrystalline Si storage layer in a metal-oxide-semiconductor field-effect-transistor is described. This non-volatile memory differ...

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Bibliographic Details
Published in:IEEE electron device letters 1980-09, Vol.1 (9), p.179-181
Main Authors: DiMaria, D.J., DeMeyer, K.M., Dong, D.W.
Format: Article
Language:English
Subjects:
Charge carrier processes
Chemical vapor deposition
Communication system control
Electrodes
Electron traps
EPROM
FETs
Nonvolatile memory
Tunneling
Voltage control
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Description
Summary:A novel type of electrically-alterable memory which uses the phenomenon of enhanced electron injection into SiO 2 from Si-rich SiO 2 to charge or discharge a floating polycrystalline Si storage layer in a metal-oxide-semiconductor field-effect-transistor is described. This non-volatile memory differs from others using floating polycrystalline Si in the charging or discharging process. This improvement is accomplished by using a chemically-vapor-deposited stack of Si-rich-SiO 2 -SiO 2 -Si-rich-SiO 2 between the floating polycrystalline Si layer and the control gate electrode. This device is capable of being written or erased in 5 msec at voltages of ≤ 16 V and in 2 µsec at voltages ≤ 23 V with excellent charge retention.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1980.25279