A method of determining minority carrier lifetime and doping level profiles of low-doped metal-oxide-semiconductor structures using pulsed photoinjection

This method. aimed at determining doping level and minority carrier lifetime of low-doped semiconductors (

Bibliographic Details

Published in:	Journal of applied physics 1981, Vol.52 (9), p.5659-5664
Main Authors:	Efron, U., Grinberg, J.
Format:	Article
Language:	English
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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