Flexible Quasi‐2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection

Organic–inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum‐well feature of two‐dimensional (2D) Ruddlesden–Popper PVKs (2D P...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2020-02, Vol.32 (6), p.e1907527-n/a
Main Authors: Wei, Shali, Wang, Fang, Zou, Xuming, Wang, Liming, Liu, Chang, Liu, Xingqiang, Hu, Weida, Fan, Zhiyong, Ho, Johnny C., Liao, Lei
Format: Article
Language:English
Subjects:
Broadband
broadband photodetection
Computer architecture
Depletion
Electrical resistivity
Gallium
Heterostructures
IGZO
Indium gallium zinc oxide
Information storage
Materials science
Optoelectronic devices
Perovskites
Photometers
Phototransistors
Polyvinyl carbazole
Substrates
Zinc oxide
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Summary:Organic–inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum‐well feature of two‐dimensional (2D) Ruddlesden–Popper PVKs (2D PVKs), a promising quasi‐2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand‐exchange spin‐coating method, quasi‐2D PVK fabricated on flexible substrates exhibits a desirable type‐II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >105 A W−1 at 457 nm, and broadband photoresponse (457–1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 1016 Jones, which is the record high value among all PVK‐based photodetectors reported to date. Due to the resistive hopping barrier in the quasi‐2D PVK, the device can also work as an optoelectronic memory for near‐infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large‐scale and uniform quasi‐2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next‐generation flexible photodetectors with unprecedented sensitivity. Large‐scale flexible photodetector arrays based on quasi‐2D perovskite/indium gallium zinc oxide heterojunctions, for efficient and stable photodetection and imaging, are demonstrated. The device exhibits excellent photoresponsivity (>105 A W−1), broadband photoresponse (457–1064 nm), and ultrahigh detectivity (5.1 × 1016 Jones). Due to the resistive hopping barrier in quasi‐2D perovskite, the device can also work as an optoelectronic memory for near‐infrared information storage.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201907527