Terahertz generation by optical rectification in chalcopyrite crystals ZnGeP2, CdGeP2 and CdSiP2

Terahertz generation by optical rectification in chalcopyrite crystals ZnGeP2, CdGeP2 and CdSiP2

Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP2, ZnGeP2 and CdSiP2. The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to...

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Bibliographic Details
Published in:Optics express 2019-06, Vol.27 (12), p.16958-16965
Main Authors: Piyathilaka, Herath P, Sooriyagoda, Rishmali, Dewasurendra, Vikum, Johnson, Matthew B, Zawilski, Kevin T, Schunemann, Peter G, Bristow, Alan D
Format: Article
Language:eng
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Summary:Optical rectification of near-infrared laser pulses generates broadband terahertz radiation in chalcopyrite crystals CdGeP2, ZnGeP2 and CdSiP2. The emission is characterized using linear-polarized excitation from 0.8 eV to 1.55 eV (1550 nm - 800 nm). All three crystals are (110)-cut and polished to 0.5 mm, thinner than the coherence length across most of the excitation photon energy range, such that they all produce a bandwidth ~2.5 THz when excited with ~100 fs pulses. It is found that CdGeP2 produced the strongest emission at telecoms wavelengths, while CdSiP2 is generally the strongest source. Pump-intensity dependence provides the nonlinear coefficients for each crystal.
ISSN:1094-4087