III–V Integration on Si(100): Vertical Nanospades

III–V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. The Ga...

Full description

Saved in:
Bibliographic Details
Published in:ACS nano 2019-05, Vol.13 (5), p.5833-5840
Main Authors: Güniat, Lucas, Martí-Sánchez, Sara, Garcia, Oscar, Boscardin, Mégane, Vindice, David, Tappy, Nicolas, Friedl, Martin, Kim, Wonjong, Zamani, Mahdi, Francaviglia, Luca, Balgarkashi, Akshay, Leran, Jean-Baptiste, Arbiol, Jordi, Fontcuberta i Morral, Anna
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:III–V integration on Si(100) is a challenge: controlled vertical vapor liquid solid nanowire growth on this platform has not been reported so far. Here we demonstrate an atypical GaAs vertical nanostructure on Si(100), coined nanospade, obtained by a nonconventional droplet catalyst pinning. The Ga droplet is positioned at the tip of an ultrathin Si pillar with a radial oxide envelope. The pinning at the Si/oxide interface allows the engineering of the contact angle beyond the Young–Dupré equation and the growth of vertical nanospades. Nanospades exhibit a virtually defect-free bicrystalline nature. Our growth model explains how a pentagonal twinning event at the initial stages of growth provokes the formation of the nanospade. The optical properties of the nanospades are consistent with the high crystal purity, making these structures viable for use in integration of optoelectronics on the Si(100) platform.
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.9b01546