Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress

Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative impact. Yet, the effect of long-term bias stress on individual CNTs, critical for most sensing applications, has remained uncertain. Here, we repo...

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Bibliographic Details
Published in:Nano letters 2019-03, Vol.19 (3), p.1460-1466
Main Authors: Noyce, Steven G, Doherty, James L, Cheng, Zhihui, Han, Hui, Bowen, Shane, Franklin, Aaron D
Format: Article
Language:English
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Summary:Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative impact. Yet, the effect of long-term bias stress on individual CNTs, critical for most sensing applications, has remained uncertain. Here, we report bias ranges under which CNT transistors can operate continuously for months or more without degradation. Using a custom characterization system, the impacts of defect formation and charge traps on the stability of CNT-based sensors under extended bias are determined. In addition to breakdown, which is well-known, we identify three additional operational modes: full stability, slow decay, and fast decay. We identify a current drift behavior that reduces dynamic range by over four orders of magnitude but is avoidable with appropriate sensing modalities. Identification of these stable operation modes and limits for nanotube-based sensors addresses concerns surrounding their development for a myriad of sensing applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.8b03986