Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD

We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes (LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical vapor deposition (MOCVD). The 527 nm green LEDs show a peak external quantum efficiency (EQE) of 53.3%, a peak wall-plug efficie...

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Bibliographic Details
Published in:Optics express 2018-12, Vol.26 (25), p.33108-33115
Main Authors: Li, P P, Zhao, Y B, Li, H J, Che, J M, Zhang, Z-H, Li, Z C, Zhang, Y Y, Wang, L C, Liang, M, Yi, X Y, Wang, G H
Format: Article
Language:English
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Summary:We demonstrate very high luminous efficacy InGaN-based green light-emitting diodes (LEDs) grown on c-plane patterned sapphire substrates (PSS) using metal organic chemical vapor deposition (MOCVD). The 527 nm green LEDs show a peak external quantum efficiency (EQE) of 53.3%, a peak wall-plug efficiency (WPE) of 54.1% and a peak luminous efficacy of 329 lm/W, respectively. A high EQE of 38.4%, a WPE of 32.1% and a very low forward voltage of 2.86 V were obtained at a typical working current density of 20 A/cm . By operating low cost green LEDs at a low current density, our devices (0.5 mm ) demonstrating an EQE and a WPE higher than 50% and an efficacy of 259 lm/W at 4 A/cm with an output power of 24 mW. High crystal quality of the InGaN/GaN MQWs was characterized by X-ray diffraction (XRD) and the advantage of the epitaxy design was investigated by APSYS software simulation. These results provide a simple way to achieve very high efficiency InGaN green LEDs.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.033108