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Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage‐Tunable Spintronic Devices

The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high‐speed response, and energy efficiency, it can be used for various spintronic applications, including spin‐Hall, spin‐pumping, and spin‐Seebeck effects. In this...

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Published in:Advanced materials (Weinheim) 2018-10, Vol.30 (40), p.e1802902-n/a
Main Authors: Guan, Mengmeng, Wang, Lei, Zhao, Shishun, Zhou, Ziyao, Dong, Guohua, Su, Wei, Min, Tai, Ma, Jing, Hu, Zhongqiang, Ren, Wei, Ye, Zuo‐Guang, Nan, Ce‐Wen, Liu, Ming
Format: Article
Language:English
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Summary:The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high‐speed response, and energy efficiency, it can be used for various spintronic applications, including spin‐Hall, spin‐pumping, and spin‐Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited “capping” platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage‐induced ferromagnetic ordering, caused by uncompensated d‐orbital electrons in the Pt metal layer. Confirmed by first‐principle calculations, this finding paves the way for novel voltage‐tunable YIG‐based spintronics. Tuning the interfacial magnetism of a bilayer system comprising yttrium iron garnet (YIG) and platinum is achieved through ionic‐liquid gating. Even with low gate potentials, Vg, an additional ferromagnetic moment in the Pt layer is created, shifting the ferromagnetic resonance of the system. This magnetoelectric effect can be applied to voltage tunable spintronic devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201802902