Loading…

Ion Migration Studies in Exfoliated 2D Molybdenum Oxide via Ionic Liquid Gating for Neuromorphic Device Applications

The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of materials and even modify the crystal structure. We pr...

Full description

Saved in:
Bibliographic Details
Published in:ACS applied materials & interfaces 2018-07, Vol.10 (26), p.22623-22631
Main Authors: Zhang, Cheng, Pudasaini, Pushpa R, Oyedele, Akinola D, Ievlev, Anton V, Xu, Liubin, Haglund, Amanda V, Noh, Joo Hyon, Wong, Anthony T, Xiao, Kai, Ward, Thomas Z, Mandrus, David G, Xu, Haixuan, Ovchinnikova, Olga S, Rack, Philip D
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical, and magnetic properties of materials and even modify the crystal structure. We present a systematic study of ionic liquid gating of exfoliated 2D molybdenum trioxide (MoO3) devices and correlate the resultant electrical properties to the electrochemical doping via ion migration during the IL biasing process. A nearly 9 orders of magnitude modulation of the MoO3 conductivity is obtained for the two types of ionic liquids that are investigated. In addition, notably rapid on/off switching was realized through a lithium-containing ionic liquid whereas much slower modulation was induced via oxygen extraction/intercalation. Time of flight–secondary ion mass spectrometry confirms the Li intercalation. Density functional theory (DFT) calculations have been carried out to examine the underlying metallization mechanism. Results of short-pulse tests show the potential of these MoO3 devices as neuromorphic computing elements due to their synaptic plasticity.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b05577