Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high‐density transient...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-07, Vol.14 (27), p.e1800945-n/a
Main Authors: Sun, Jing, Wang, Hong, Song, Fang, Wang, Zhan, Dang, Bingjie, Yang, Mei, Gao, Haixia, Ma, Xiaohua, Hao, Yue
Format: Article
Language:English
Subjects:
Arrays
Bend radius
Biocompatibility
Biomedical materials
Computer memory
Deionization
flexible electronics
Magnesium oxide
Memory devices
Memristors
Nanotechnology
physically transient
secure electronics
Superconductors (materials)
Surgical implants
Switching
threshold switching (TS) devices
Transfer printing
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Summary:Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high‐density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 107, steep turn‐on slope of
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201800945