Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material

The ability to continuously tune the emission wavelength of mid-infrared thermal emitters while maintaining high peak emissivity remains a challenge. By incorporating the nonvolatile phase changing material Ge Sb Te (GST), two different kinds of wavelength-tunable mid-infrared thermal emitters based...

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Bibliographic Details
Published in:Nanoscale 2018, Vol.10 (9), p.4415-4420
Main Authors: Du, Kaikai, Cai, Lu, Luo, Hao, Lu, Yue, Tian, Jingyi, Qu, Yurui, Ghosh, Pintu, Lyu, Yanbiao, Cheng, Zhiyuan, Qiu, Min, Li, Qiang
Format: Article
Language:English
Subjects:
Coolers
Emission analysis
Emissions control
Emissivity
Emitters
Gas sensors
Infrared detectors
Infrared imaging
Phase transitions
Thermal emission
Thermal imaging
Thermophotovoltaics
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Summary:The ability to continuously tune the emission wavelength of mid-infrared thermal emitters while maintaining high peak emissivity remains a challenge. By incorporating the nonvolatile phase changing material Ge Sb Te (GST), two different kinds of wavelength-tunable mid-infrared thermal emitters based on simple layered structures (GST-Al bilayer and Cr-GST-Au trilayer) are demonstrated. Aiming at high peak emissivity at a tunable wavelength, an Al film and an ultrathin (∼5 nm) top Cr film are adopted for these two structures, respectively. The gradual phase transition of GST provides a tunable peak wavelength between 7 μm and 13 μm while high peak emissivity (>0.75 and >0.63 for the GST-Al and Cr-GST-Au emitters, respectively) is maintained. This study shows the capability of controlling the thermal emission wavelength, the application of which may be extended to gas sensors, infrared imaging, solar thermophotovoltaics, and radiative coolers.
ISSN:2040-3364
2040-3372
DOI:10.1039/c7nr09672k