Single Atomic Layer Ferroelectric on Silicon

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance–voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in...

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Bibliographic Details
Published in:Nano letters 2018-01, Vol.18 (1), p.241-246
Main Authors: Dogan, Mehmet, Fernandez-Peña, Stéphanie, Kornblum, Lior, Jia, Yichen, Kumah, Divine P, Reiner, James W, Krivokapic, Zoran, Kolpak, Alexie M, Ismail-Beigi, Sohrab, Ahn, Charles H, Walker, Frederick J
Format: Article
Language:English
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Summary:A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance–voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5–10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811).
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.7b03988