Interface Engineering with MoS2–Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

Metal oxide‐based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2018-01, Vol.14 (2), p.n/a
Main Authors: Wang, Xue‐Feng, Tian, He, Zhao, Hai‐Ming, Zhang, Tian‐Yu, Mao, Wei‐Quan, Qiao, Yan‐Cong, Pang, Yu, Li, Yu‐Xing, Yang, Yi, Ren, Tian‐Ling
Format: Article
Language:English
Subjects:
2D materials
Atomic structure
Data storage
Engineering
Hafnium oxide
interface engineering
Leakage current
Low voltage
Machine learning
metal nanoparticles
Molybdenum disulfide
Nanoparticles
Nanotechnology
Palladium
Random access memory
resistive random access memory
Switching
Thickness
transition metal dichalcogenides
Wearable technology
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Summary:Metal oxide‐based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS2)–palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfOx)‐based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from −3.5 to −0.8 V) with better uniformity under a relatively thick HfOx layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface‐engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. Based on the idea of 2D–0D interface engineering, indium–tin–oxide (ITO)/HfOx/MoS2–Pd NPs/ITO resistive random access memory (RRAM) is fabricated. Compared to conventional ITO/HfOx/ITO RRAM, the SET voltage is reduced and the memory window is enhanced. Also, this RRAM exhibits good stability and long retention time with high transparency, making it a promising candidate in the field of data storage for transparent circuits.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201702525