Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

To enhance the low hole mobility (∼40 cm 2 V −1 s −1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V −1 s −1 ) has been constructed and its structural and electronic properties are...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale 2017-10, Vol.9 (38), p.14682-14689
Main Authors: Ding, Yi-min, Shi, Jun-jie, Xia, Congxin, Zhang, Min, Du, Juan, Huang, Pu, Wu, Meng, Wang, Hui, Cen, Yu-lang, Pan, Shu-hang
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To enhance the low hole mobility (∼40 cm 2 V −1 s −1 ) of InSe monolayer, a novel two-dimensional (2D) van der Waals heterostructure made of InSe and black phosphorus (BP) monolayers with high hole mobility (∼10 3 cm 2 V −1 s −1 ) has been constructed and its structural and electronic properties are investigated using first-principles calculations. We find that the InSe/BP heterostructure exhibits a direct band gap of 1.39 eV and type-II band alignment with electrons (holes) located in the InSe (BP) layer. The band offsets of InSe and BP are 0.78 eV for the conduction band minimum and 0.86 eV for the valence band maximum, respectively. Surprisingly, the hole mobility in the InSe/BP heterostructure exceeds 10 4 cm 2 V −1 s −1 , which is one order of magnitude larger than the hole mobility of BP and three orders larger than that of the InSe monolayer. The electron mobility is also increased to 3 × 10 3 cm 2 V −1 s −1 . The physical reason has been analyzed deeply, and a universal method is proposed to improve the carrier mobility of 2D materials by forming heterostructures with them and other 2D materials with complementary properties. The InSe/BP heterostructure can thus be widely used in nanoscale InSe-based field-effect transistors, photodetectors and photovoltaic devices due to its type-II band alignment and high carrier mobility. Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.
ISSN:2040-3364
2040-3372
DOI:10.1039/c7nr02725g