Room temperature continuous wave quantum dot cascade laser emitting at 7.2 μm

We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that are embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 μm has been demonstrated with the threshold curre...

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Bibliographic Details
Published in:Optics express 2017-06, Vol.25 (12), p.13807-13815
Main Authors: Zhuo, Ning, Zhang, Jin-Chuan, Wang, Feng-Jiao, Liu, Ying-Hui, Zhai, Shen-Qiang, Zhao, Yue, Wang, Dong-Bo, Jia, Zhi-Wei, Zhou, Yu-Hong, Wang, Li-Jun, Liu, Jun-Qi, Liu, Shu-Man, Liu, Feng-Qi, Wang, Zhan-Guo, Khurgin, Jacob B, Sun, Greg
Format: Article
Language:English
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Summary:We demonstrate a quantum cascade laser with active regions consisting of InAs quantum dots deposited on GaAs buffer layers that are embedded in InGaAs wells confined by InAlAs barriers. Continuous wave room temperature lasing at the wavelength of 7.2 μm has been demonstrated with the threshold current density as low as 1.89 kA/cm , while in pulsed operational mode lasing at temperatures as high as 110 °C had been observed. A phenomenological theory explaining the improved performance due to weak localization of states had been formulated.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.25.013807