N and Al co-doping as a way to p-type ZnO without post-growth annealing

We demonstrate experimental results on p-type ZnO films grown by atomic layer deposition (ALD) and co-doped with aluminum and nitrogen (ANZO). The films were obtained at low temperature (100 °C) with different N to Al ratio and show conductivity type, which depends on the N and Al content. We applie...

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Bibliographic Details
Published in:Materials research express 2016-12, Vol.3 (12), p.125907-125907
Main Authors: Snigurenko, Dymitr, Guziewicz, Elzbieta, Krajewski, Tomasz A, Jakiela, Rafal, Syryanyy, Yevgen, Kopalko, Krzysztof, Paszkowicz, Wojciech
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Atomic layer deposition
co-doping
Dopants
homojunction
Nitrogen
nitrogen and aluminum
p-type
Silicon substrates
X rays
Zinc oxide
ZnO
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Summary:We demonstrate experimental results on p-type ZnO films grown by atomic layer deposition (ALD) and co-doped with aluminum and nitrogen (ANZO). The films were obtained at low temperature (100 °C) with different N to Al ratio and show conductivity type, which depends on the N and Al content. We applied the x-ray photoelectron spectroscopy in order to get insight into a chemical nature of dopants and we found three pronounced contributions of the N1s core level which appear at binding energies of 396.1, 397.4 and around 399 eV. Based on ANZO and undoped ZnO films, both grown by the ALD technique, the ZnO homojunction was obtained in one technological process without any post-growth high temperature processing. The rectification ratio as high as 4 × 104 at 2 V was achieved when an ultrathin Al2O3 layer was inserted between p- and n-type ZnO and a n-type ZnO buffer layer deposited on an insulating Si substrate was applied.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/3/12/125907