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Influence of semiconductor interlayer thickness on electric and magnetic properties of {[(Co sub(41)Fe sub(39)B sub(20)) sub(34)(SiO sub(2)) sub(66)]/[In sub(36)Y sub(4)O sub(60)]} sub(93) multilayer nanostructure

Influence of the thickness of the In sub(36)Y sub(4)O sub(60) semiconductor interlayer on electric and magnetic properties of the [(Co sub(41)Fe sub(39)B sub(20)) sub(34)(SiO sub(2)) sub(66)]/[In sub(36)Y sub(4)O sub(6)0} sub(93) multilayer system has been studied. Studied properties are found to de...

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Bibliographic Details
Published in:Ferroelectrics 2016-09, Vol.501 (1), p.173-179
Main Authors: Babkina, I V, Gabriel's, K S, Zhilova, O V, Kalinin, YuE, Kudrin, A M, Sitnikov, A V
Format: Article
Language:English
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Summary:Influence of the thickness of the In sub(36)Y sub(4)O sub(60) semiconductor interlayer on electric and magnetic properties of the [(Co sub(41)Fe sub(39)B sub(20)) sub(34)(SiO sub(2)) sub(66)]/[In sub(36)Y sub(4)O sub(6)0} sub(93) multilayer system has been studied. Studied properties are found to depend on the thickness of the semiconductor interlayer. We have observed the increase in the conductivity and, consequently, in the permeability of the nanostructure with the continuous semiconductor interlayer after the heat treatment.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2016.1204863