The electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions

Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol–gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n -CdO/ p -Si junctions were investigated. The current–voltage ( I – V ) characteristics of...

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Bibliographic Details
Published in:Indian journal of physics 2017-04, Vol.91 (4), p.413-420
Main Authors: Çavas, M, Yakuphanolu, F, Karatas, S
Format: Article
Language:English
Subjects:
Astrophysics and Astroparticles
Cadmium
Conductivity
Electric potential
Electric properties
Electrical junctions
Gallium
Luminous intensity
Nanostructure
Nanostructured materials
Original Paper
Photodiodes
Physics
Physics and Astronomy
Silicon
Thin films
Voltage
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Summary:Gallium doped cadmium-oxide (CdO: Ga) thin films were successfully deposited by sol–gel spin coating method on p-type Si substrate. The electrical properties of the photodiode based on nanostructure Ga doped n -CdO/ p -Si junctions were investigated. The current–voltage ( I – V ) characteristics of the structure were investigated under various light intensity and dark. It was observed that generated photocurrent of the Au/ n -CdO/p-Si junctions depended on light intensity. The capacitance–voltage and conductance–voltage measurements were carried out for this diode in the frequency range between 100 and 1000 kHz at room temperature by steps of 100 kHz. The capacitance decreased with increasing frequency due to a continuous distribution of the interface states. These results suggested that the Au/ n -CdO/ p -Si Schottky junctions could be utilized as a photosensor. Furthermore, the voltage and frequency dependence of series resistance were calculated from the C – V and G/ω–V measurements and plotted as functions of voltage and frequency. The distribution profile of R S – V gave a peak in the depletion region at low frequencies and disappeared with increasing frequencies.
ISSN:0973-1458
0974-9845
DOI:10.1007/s12648-016-0952-4