Weak Interactions under Pressure: hp‐CuBi and Its Analogues

The metastable binary compound hp‐CuBi was obtained from the direct chemical reaction between copper and bismuth at a pressure of 5 GPa and a temperature of 720 K. The atomic arrangement comprises slabs of puckered Cu layers sandwiched between Bi planes. The QTAIM charges calculated for compounds of...

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Bibliographic Details
Published in:Angewandte Chemie International Edition 2017-05, Vol.56 (20), p.5620-5624
Main Authors: Guo, Kai, Akselrud, Lev, Bobnar, Matej, Burkhardt, Ulrich, Schmidt, Marcus, Zhao, Jing‐Tai, Schwarz, Ulrich, Grin, Yuri
Format: Article
Language:English
Subjects:
Bismuth
Charge transfer
Chemical bonds
Chemical reactions
Copper
Electrical conductivity
Electrical resistivity
Heavy metals
high-pressure high-temperature synthesis
nonpolar compounds
Pressure
Slabs
Superconductivity
Temperature effects
Transition metals
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Summary:The metastable binary compound hp‐CuBi was obtained from the direct chemical reaction between copper and bismuth at a pressure of 5 GPa and a temperature of 720 K. The atomic arrangement comprises slabs of puckered Cu layers sandwiched between Bi planes. The QTAIM charges calculated for compounds of bismuth with transition metals reveal negligible charge transfer for hp‐CuBi. Analysis of the chemical bonding with position‐space techniques discloses multicenter interactions within the Bi‐Cu‐Bi slabs and lone‐pair interactions of the van der Waals type between these entities. hp‐CuBi exhibits metal‐type electrical conductivity with superconductivity below Tc=1.3 K. The metastable binary compound hp‐CuBi was prepared from copper and bismuth at 5 GPa and 720 K. The atomic arrangement consists of slabs of puckered Cu layers sandwiched between Bi planes. Analysis of the chemical bonding reveals multicenter interactions within and van der Waals type interactions between the slabs. The new compound is a superconductor below Tc=1.3 K.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201700712