Initialization‐Free Multilevel States Driven by Spin–Orbit Torque Switching

By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin–orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2017-02, Vol.29 (8), p.np-n/a
Main Authors: Huang, Kuo‐Feng, Wang, Ding‐Shuo, Tsai, Ming‐Han, Lin, Hsiu‐Hau, Lai, Chih‐Huang
Format: Article
Language:English
Subjects:
Co/Pt multilayers
Cobalt
Computer memory
Density
initialization‐free
Magnetization
Materials science
Multilayers
Multilevel
Random access memory
spin–orbit torque
Switching
Torque
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Summary:By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin–orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization‐free multilevel memory advances the spin–orbit‐torque magnetic random access memory to higher storage density for practical applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601575