Steep switching characteristics of single-gated feedback field-effect transistors

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed usi...

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Bibliographic Details
Published in:Nanotechnology 2017-02, Vol.28 (5), p.055205-055205
Main Authors: Kim, Minsuk, Kim, Yoonjoong, Lim, Doohyeok, Woo, Sola, Cho, Kyoungah, Kim, Sangsig
Format: Article
Language:English
Subjects:
feedback field-effect transistors
positive feedback loop
steep switching characteristics
subthreshold swing
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Summary:In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec−1, an on/off current ratio of approximately 1011, and an on-current of approximately 10−4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/28/5/055205