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Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes
Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr−1 m−2 at a current de...
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Published in: | Advanced materials (Weinheim) 2016-09, Vol.28 (36), p.8029-8036 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Lead‐free perovskite infrared light‐emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer‐sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr−1 m−2 at a current density of 364.3 mA cm−2 and maximum external quantum efficiency of 3.8% at 4.5 V. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201601024 |