Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors

An ambipolar dual‐channel field‐effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-11, Vol.28 (43), p.9519-9525
Main Authors: Lee, Inyeal, Rathi, Servin, Lim, Dongsuk, Li, Lijun, Park, Jinwoo, Lee, Yoontae, Yi, Kyung Soo, Dhakal, Krishna P., Kim, Jeongyong, Lee, Changgu, Lee, Gwan-Hyoung, Kim, Young Duck, Hone, James, Yun, Sun Jin, Youn, Doo-Hyeb, Kim, Gil-Ho
Format: Article
Language:English
Subjects:
dual-channel
heterostructures
MoS2
photoresponse
WSe2
Online Access:Get full text
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Summary:An ambipolar dual‐channel field‐effect transistor (FET) with a WSe2/MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2 and WSe2, respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2/MoS2 dual‐channel FET.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601949