Graphene growth on silicon carbide: A review

Graphene has been widely heralded over the last decade as one of the most promising nanomaterials for integrated, miniaturized applications spanning from nanoelectronics, interconnections, thermal management, sensing, to optoelectronics. Graphene grown on silicon carbide is currently the most likely...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2016-09, Vol.213 (9), p.2277-2289
Main Authors: Mishra, Neeraj, Boeckl, John, Motta, Nunzio, Iacopi, Francesca
Format: Article
Language:English
Subjects:
Arrays
Electronics
Epitaxial growth
Graphene
Nanoelectronics
Nanomaterials
Optoelectronics
Semiconductors
Silicon
Silicon carbide
Silicon substrates
Thermal decomposition
Thermal management
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Summary:Graphene has been widely heralded over the last decade as one of the most promising nanomaterials for integrated, miniaturized applications spanning from nanoelectronics, interconnections, thermal management, sensing, to optoelectronics. Graphene grown on silicon carbide is currently the most likely candidate to fulfill this promise. As a matter of fact, the capability to synthesize high‐quality graphene over large areas using processes and substrates compatible as much as possible with the well‐established semiconductor manufacturing technologies is one crucial requirement. We review here, the enormous scientific and technological advances achieved in terms of epitaxial growth of graphene from thermal decomposition of bulk silicon carbide and the fine control of the graphene electronic properties through intercalation. Finally, we discuss perspectives on epitaxial graphene growth from silicon carbide on silicon, a particularly challenging area that could result in maximum benefit for the integration of graphene with silicon technologies. This article provides a comprehensive review of the scientific progress of epitaxial graphene on silicon carbide and sketches its future perspectives. Strong focus is dedicated to recent progress in graphene growth on silicon carbide films onto silicon substrates. Integration of graphene with silicon is of great interest not just because of lower fabrication costs, but also since it would offer seamless integration with a vast array of silicon micro‐ and nano‐ technologies for electronics, photonics, and micro‐electro‐mechanical systems.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600091