Atomic-resolution analysis for the effects of heat treatment temperatures on the growth of chemically-ordered regions in Pb(Mg1/3Nb2/3)O3 thin films

This paper describes growth behaviors of chemically-ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) epitaxial thin films. The films are crystalized at 650°C, which corresponds to about half of the crystallization temperature of bulk crystals. We obtained PMN epitaxial thin films with high crystalli...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2016/06/01, Vol.124(6), pp.697-701
Main Authors: FAN, Cangyu, KIGUCHI, Takanori, AKAMA, Akihiro, KONNO, Toyohiko J.
Format: Article
Language:jpn ; eng
Subjects:
Ceramics
Chemical solution deposition (CSD)
Chemically ordered region (COR)
Clusters
Crystallinity
Epitaxial growth
HAADF-STEM
Habits
Nucleation
Planes
PMN
Thin film
Thin films
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Summary:This paper describes growth behaviors of chemically-ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) epitaxial thin films. The films are crystalized at 650°C, which corresponds to about half of the crystallization temperature of bulk crystals. We obtained PMN epitaxial thin films with high crystallinity by using a metallo-organic decomposition (MOD) process. According to our atomic-resolution analysis using HAADF-STEM images, it is shown that CORs in PMN epitaxial thin films grow by nucleation of small clusters whose sizes are 1 to 2 nm on each side of habit plane, {100} and {110}. In addition, post-annealing process at 700 or 800°C causes growth of CORs. The growth mechanism of CORs is not by the expansion of each cluster but by the nucleation of new clusters. After post-annealing at high temperatures, CORs join with each other on their habit plane and made a network along 〈100〉, 〈110〉 and 〈112〉 direction.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.16036