P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

IZTO‐TFT was inherently having high mobility; however, the stability is a concern hindering it from practical application. In this paper, we used nitrogen doping to improve the NGBS stability by a factor of 80%. Furthermore, we also adopted IZTO (high‐conductive)/IZTO:N double active layer structure...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2016-05, Vol.47 (1), p.1186-1188
Main Authors: Li, GongTan, Yang, Bo-Ru, Liu, Chuan, Lee, Chia-Yu, Wu, Yuan-Chun, Lu, Po-Yen, Deng, ShaoZhi, Shieh, Han-Ping D., Xu, NingSheng
Format: Article
Language:English
Subjects:
a-IZTO
Amorphous structure
Bias
Degradation
Gates
high mobility
NGBS
Nitrogen doping
Semiconductor devices
Stability
Technical papers
Thin film transistors
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Summary:IZTO‐TFT was inherently having high mobility; however, the stability is a concern hindering it from practical application. In this paper, we used nitrogen doping to improve the NGBS stability by a factor of 80%. Furthermore, we also adopted IZTO (high‐conductive)/IZTO:N double active layer structure to avoid mobility degradation.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10879