Current Fluctuations in a Semiconductor Quantum Dot with Large Energy Spacing

We report on the measurements of the current noise properties of electron tunneling through a split-gate GaAs quantum dot with large energy level spacing and a small number of electrons. Shot noise is full Poissonian or suppressed in the Coulomb-blockaded regime, while it is enhanced to show as supe...

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Bibliographic Details
Published in:Chinese physics letters 2014-12, Vol.31 (12), p.127304-127301
Main Author: Jeong, Heejun
Format: Article
Language:English
Subjects:
Electron tunneling
Energy levels
Fluctuation
Mathematical analysis
Multilevel
Noise
Qunatum dots
Semiconductors
Shot noise
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Summary:We report on the measurements of the current noise properties of electron tunneling through a split-gate GaAs quantum dot with large energy level spacing and a small number of electrons. Shot noise is full Poissonian or suppressed in the Coulomb-blockaded regime, while it is enhanced to show as super-Poissonian when an excited energy level is involved by finite source-drain bias. The results can be explained by multiple Poissonian processes through multilevel sequential tunneling.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/12/127304