Avalanche Noise in Al sub(0.52)In sub(0.48)P Diodes

Multiplication and avalanche excess noise measurements have been undertaken on a series of AlInP homo-junction p-i-n and n-i-p diodes with $i$ region widths ranging from 0.04 to 0.89 $\mu \text{m}$ , using 442 and 460 nm wavelength light. Low dark currents of 1000 kV/cm. For a given multiplication f...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 2016-02, Vol.28 (4), p.481-484
Main Authors: Qiao, L, Cheong, J S, Ong, JSL, Ng, J S, Krysa, AB, Green, JE, David, JPR
Format: Article
Language:English
Subjects:
Avalanches
Dark current
Diodes
Multiplication
Noise
Noise measurement
Photonic band gaps
Wavelengths
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Multiplication and avalanche excess noise measurements have been undertaken on a series of AlInP homo-junction p-i-n and n-i-p diodes with $i$ region widths ranging from 0.04 to 0.89 $\mu \text{m}$ , using 442 and 460 nm wavelength light. Low dark currents of 1000 kV/cm. For a given multiplication factor, the excess noise decreased as the avalanche width decreased due to the dead-space effect. Using 460 nm wavelength light, measurements showed that a separate absorption multiplication avalanche photodiode with a nominal multiplication region width of 0.2 $\mu \text{m}$ had an effective $k$ (hole to electron ionization coefficient ratio) of $\sim 0.3$ .
ISSN:1941-0174
DOI:10.1109/LPT.2015.2499545